Samsung MZ-V8P2T0BW internal solid state drive M.2 2000 GB PCI Express 4.0 V-NAND MLC NVMe
Part number:
MZ-V8P2T0BW
EAN:
8806090696534
KSh 27,413.33
net
KSh 31,799.46
gross
Availability:
6
pcs
1
1
2
3
4
5
6
7
8
9+
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Description
Read more about Samsung MZ-V8P2T0BW internal solid state drive M.2 2000 GB PCI Express 4.0 V-NAND MLC NVMe
Specifications
Features
NVMe version
1.3c
Security algorithms
256-bit AES
SSD form factor
M.2
SSD capacity
2 TB
Interface
PCI Express 4.0
Memory type
V-NAND MLC
NVMe
Yes
Component for
PC/Laptop
Hardware encryption
Yes
Read speed
7000 MB/s
Write speed
5100 MB/s
Random read (4KB)
1000000 IOPS
Random write (4KB)
1000000 IOPS
PCI Express interface data lanes
x4
TRIM support
Yes
S.M.A.R.T. support
Yes
Mean time between failures (MTBF)
1500000 h
Power
Operating voltage
3.3 V
Power consumption (max)
7.2 W
Power consumption (average)
6.1 W
Power consumption (standby)
0.035 W
Operational conditions
Operating temperature (T-T)
0 - 70 °C
Maximum operating temperature
70 °C
Operating shock
1500 G
Weight & dimensions
Width
80.2 mm
Depth
2.38 mm
Height
22.1 mm
Weight
9 g
Packaging data
Package type
Box
Logistics data
Harmonized System (HS) code
84717070
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