Micron MTA144ASQ16G72LSZ-2S6E1 memory module 128 GB 1 x 128 GB DDR4 2666 MHz ECC
> DDR4 functionality and operations supported as defined in the component data sheet
> 288-pin, command/address/control registered, data buffered, load-reduced dual in-line memory module (LRDIMM)
> Fast data transfer rates: PC4-2933, PC4-2666
> 128GB (16 Gig x 72)
> V DD = 1.20V (NOM)
> V PP = 2.5V (NOM)
> V DDSPD = 2.5V (NOM)
> Supports ECC error detection and correction
> Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
> Low-power auto self refresh (LPASR)
> On-die internal, adjustable, V REFDQ generation
> 2 package ranks x 4 logic ranks
> On-board I 2 C temperature sensor with integrated serial presence-detect (SPD) EEPROM
> 32Gb, 3DS 4-high die stack x4 package, Master/Slave control logic. Each die with 16 internal banks
> 4 groups of 4 banks each
> Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
> Selectable BC4 or BL8 on-the-fly (OTF)
> Gold edge contacts
> Halogen-free
> Fly-by topology
> Multiplexed command and address bus
> Terminated control, command and address bus
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